YANGZHOU POSITIONING TECH CO., LTD.
YANGZHOU POSITIONING TECH CO., LTD.
ホーム > 製品情報> 半導体プラスチックパッケージ> Bi Directions Thyristor(Triac)> TO-94セラミックスタッドトライアック100A
TO-94セラミックスタッドトライアック100A
TO-94セラミックスタッドトライアック100A
TO-94セラミックスタッドトライアック100A

TO-94セラミックスタッドトライアック100A

$26≥100Piece/Pieces

お支払い方法の種類:L/C,T/T,Paypal
インコタームズ:FOB,CFR,CIF
最小注文数:100 Piece/Pieces
輸送方法:Ocean,Air
ポート:Shanghai
製品の属性

モデルYZPST-KS100A600V

ブランドYZPST

梱包と配送
販売単位 : Piece/Pieces
パッケージ型式 : より詳細な製品情報と取引情報については、私達の電子メールアドレスに連絡してください:info@yzpst.com
製品の説明

セラミックスタッドトライアック YZPST-KS100A600V


M AXI M U M R t t i n g s A n d C H A R交流のT E Rは、T ICSであります

Symbol

Parameter

Values

Units

Test Conditions

ON-STATE

ITAV

Mean on-state current

-

A

Sinewave,180° conduction,Tc=100°C

ITRMS

RMS value of on-state current

100

A

Nominal value

 

ITSM

Peak one cycle surge

(non repetitive) current

 

900

 

A

10.0 msec (50Hz), sinusoidal wave- shape, 180o conduction, Tj = 125 °C

I2t

I square t

4050

A2s

8.3 msec and 10.0 msec

IL

Latching current

100

mA

VD = 12 V; RL= 12 ohms

IH

Holding current

30

mA

VD = 12 V; I = 1 A

 

VTM

 

Peak on-state voltage

 

2.0

 

V

ITM = 150 A; Duty cycle 0.01%; Tj = 25 °C

 

 

di/dt

 

Critical rate of rise of on-state current

 

non-repetitive

 

300

 

 

A/µs

 

Gate drive 20V, 20Ω, tr1μs, Tj=Tjmax,

anode voltage80% VDRM

repetitive

50

BLOCKING

VDRM

VRRM

Repetitive peak off state voltage

Repetitive peak reverse voltage

 

600

 

V

 

VDSM

VRSM

Non repetitive peak off state voltage

Non repetitive peak reverse voltage

 

700

 

V

 

IDRM

IRRM

Repetitive  peak  off  state  current

Repetitive peak reverse   current

 

10

 

mA

 

Tj = 125 °C ,VRRM VDRM applied

dV/dt

Critical rate of voltage rise

100

V/µs

TJ=TJmax, linear to 80% rated VDRM

TRIGGEING

PG(AV)

Average gate power dissipation

-

W

 

PGM

Peak gate power dissipation

-

W

 

IGM

Peak gate current

-

A

 

IGT

Gate trigger current

200

mA

TC = 25 °C

VGT

Gate trigger voltage

3.0

V

TC = 25 °C

VT(T0)

Treshold voltage

1

V

 

rT

Slope resistance

2.4

 

VGD

Gate non-trigger voltage

0.2

V

Tj = 125 °C

SWITCHING

tq

Turn-off time

-

µs

Tj = 125 °C

 

td

 

Delay time

 

-

Gate current 1A, di/dt=1A/μs,

Vd=0.67%VDRM, TJ=25 °C

Qrr

Reverse recovery charge

-

 

 

EのR M A n d MのEC H iが N CAL

Symbol

 

Parameter

Values

Units

 

Test Conditions

Tj

Operating temperature

-40~125

°C

 

 

Tstg

Storage temperature

-40~150

°C

 

 

 

R th (j-c)

Thermal  resistance  -  junction  to

case

 

0.4

 

°C/W

DC operation ,Single sided

cooled

R th (c-s)

Thermal resistance - case to sink

0.08

°C/W

Single sided cooled

P

Mounting force

-

Nm

 

 

W

Weight

 

-

g

about

 


アウトライン

triac KS100A600


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