高サージ能力330A双方向SCRトライアック
$5.92-999 Piece/Pieces
$4.5≥1000Piece/Pieces
お支払い方法の種類: | L/C,T/T,Paypal |
インコタームズ: | FOB,CFR,CIF |
最小注文数: | 1000 Piece/Pieces |
輸送方法: | Ocean,Air |
ポート: | Shanghai |
$5.92-999 Piece/Pieces
$4.5≥1000Piece/Pieces
お支払い方法の種類: | L/C,T/T,Paypal |
インコタームズ: | FOB,CFR,CIF |
最小注文数: | 1000 Piece/Pieces |
輸送方法: | Ocean,Air |
ポート: | Shanghai |
モデル: YZPST-SG50AA80-1
ブランド: YZPST
販売単位 | : | Piece/Pieces |
パッケージ型式 | : | 1.帯電防止パッケージ2.カートンボックス3.プラスチック保護パッケージ |
トライアック YZPST-SG50AA80
SG50AA80双方向SCRトライアック800V
トライアック(絶縁型)
SG50AAは、コピー機、電子レンジ、半導体スイッチ、モーター制御、照明制御、ヒーター制御などの幅広いアプリケーションに適した絶縁成形トライアックです。●IT(AV)50A
●高いサージ能力330A
●タブ端子
Symbol |
Item |
|
|
|
Unit |
SG50AA80 |
SG50AA120 |
SG50AA160 |
|||
VDRM |
Repetitive Peak Off-State Voltage |
800 |
1200 |
1600 |
V |
Symbol |
Item |
Conditions |
Ratings |
Unit |
IT(RMS) |
R.M.S. On-State Current |
Tc=58℃ |
50 |
A |
ITSM |
Surge On-State Current |
One cycle, 50Hz/60Hz, peak, non-repetitive |
450 |
A |
I2t |
I2t |
Value for one cycle of surge current |
730 |
A2S |
PGM |
Peak Gate Power Dissipation |
|
10 |
W |
PG(AV) |
Average Gate Power Dissipation |
|
1 |
W |
IGM |
Peak Gate Current |
|
3 |
A |
VGM |
Peak Gate Voltage |
|
10 |
V |
di/dt |
Critical Rate of Rise of On-State Current |
IG=100mA,Tj=25℃,VD=1/2VDRM, |
100 |
A/μs |
Tj |
Operating Junction Temperature |
|
-25 to +125 |
℃ |
Tstg |
Storage Temperature |
|
-40 to +125 |
℃ |
|
Mounting Torque(M4) |
Recommended Value 1.0-1.4(10-14) |
1.5(15) |
N.m |
|
Mass |
Typical value |
2 |
g |
電動L C H ARA C T E ristics
Symbol |
Item |
Conditions |
Ratings |
Unit |
|
IDRM |
Reptitive Peak Off-State Current,
max |
VD=VDRM, Single phase, half wave, Tj=125℃ |
5 |
mA |
|
VTM |
Peak On-State Voltage, max |
On-State Current [√ 2 × IT ( RMS )], Inst.
measurement |
1.4 |
V |
|
I + GT1 |
1 |
Gate Trigger Current, max |
Tj=25℃,IT=1A,VD=6V |
80 |
mA |
I -GT1 |
2 |
Tj=25℃,IT=1A,VD=6V |
80 |
||
I + GT3 |
3 |
|
- |
||
I -GT3 |
4 |
Tj=25℃,IT=1A,VD=6V |
80 |
||
V+ GT1 |
1 |
Gate Trigger Voltage, max |
Tj=25℃,IT=1A,VD=6V |
3 |
V |
V-GT1 |
2 |
Tj=25℃,IT=1A,VD=6V |
3 |
||
V+ GT3 |
3 |
|
- |
||
V-GT3 |
4 |
Tj=25℃,IT=1A,VD=6V |
3 |
||
VGD |
Non-Trigger Gate Voltage, min |
Tj=125℃,VD=1/2VDRM |
0.2 |
V |
|
tgt |
Turn On Time, max. |
IT(RMS),IG=100mA,VD=1/2VDRM,Tj =25℃,dIG/dt=1A/μs |
10 |
V |
|
dv/dt |
Critical Rate of Rise on-State
Voltage,min. |
Tj=125℃,VD=2/3VDRM,Exoponential wave. |
300 |
V/μs |
|
dv/dt]c |
Critical Rate of Rise off-State
Voltage at commutation, min |
Tj=125℃,VD=2/3VDRM,[di/dt]c=15A/ms |
200 |
V/μs |
|
IH |
Holding Current, typ. |
Tj=25℃ |
30 |
mA |
|
Rth(j-c) |
Thermal Impedance, max |
Junction to case |
1.5 |
℃/W |
Privacy statement: Your privacy is very important to Us. Our company promises not to disclose your personal information to any external company with out your explicit permission.
Fill in more information so that we can get in touch with you faster
Privacy statement: Your privacy is very important to Us. Our company promises not to disclose your personal information to any external company with out your explicit permission.