高電圧サイリスタ制御SCR kp1000A 6500V
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インコタームズ: | FOB,CFR,CIF |
輸送方法: | Ocean,Air |
ポート: | Shanghai |
お支払い方法の種類: | L/C,T/T,Paypal |
インコタームズ: | FOB,CFR,CIF |
輸送方法: | Ocean,Air |
ポート: | Shanghai |
モデル: YZPST-KP1000A6500V
ブランド: YZPST
位相制御サイリスタ
YZPST-KP1000A6500V
位相制御サイリスタ 6600Vはサイリスタ整流器の略です。これは、サイリスタとも呼ばれる3つのPN接合の4つの層を有する高出力半導体デバイスの一種である。小容量で簡単な構造と強固な特性のため、最も一般的に使用される半導体デバイスの1つである。
Symbol |
Definition |
Conditions |
|
min. |
typ. |
max. |
Unit |
V |
max. non-repetitive reverse/forward blocking voltage |
TJ = 25°C |
|
|
6600 |
V |
|
V |
max. repetitive reverse/forward blocking voltage |
TJ = 25°C |
|
|
6500 |
V |
|
VT |
On-state voltage |
IT=1000 A |
TJ = 25°C |
|
|
2.95 |
V |
IT(AV) |
average forward current |
TC=25°C |
|
|
|
1000 |
A |
IT(RMS) |
RMS forward current |
180° sine |
|
|
|
1140 |
A |
RthJC |
thermal resistance junction to case |
|
|
|
|
22 |
K/KW |
RthCH |
thermal resistance case to heatsink |
|
|
|
|
4 |
K/KW |
ITSM |
max. forward surge current |
t = 10 ms; (50 Hz), sine |
TJ = 25°C |
|
|
9.7 |
kA |
I²t |
value for fusing |
t = 10 ms; (50 Hz), sine |
TJ = 25°C |
|
|
470 |
kA²s |
di/dt |
Rate of rise of on-state current |
TJ = 125°C; f = 50 Hz tP=200µs;diG/dt=0.15A/µs; IG=0.15A;VD= 2/3VDRM |
repetitive |
|
|
50 |
A/µs |
non-repet |
|
|
1000 |
A/µs |
|||
dv/dt |
Maximum linear rate of rise of off-state voltage |
VD= 2/3 RGK =∞; method 1 (linear voltage rise) |
TJ = 125°C |
|
|
2000 |
V/µs |
VGT |
gate trigger voltage |
VD = 6V |
TJ = 25°C |
|
|
2.6 |
V |
IGT |
gate trigger current |
VD = 6V |
TJ = 25°C |
|
|
400 |
mA |
IL |
latching current |
|
TJ = 25°C |
|
|
500 |
mA |
IH |
holding current |
|
TJ = 25°C |
|
|
900 |
mA |
tgd |
gate controlled delay time |
|
TJ = 25°C |
|
|
3 |
µs |
tq |
Turn-off time |
VR=10 V; IT=20A; VD= 2/3 |
TJ = 150°C |
|
|
600 |
µs |
Tstg |
storage temperature |
|
|
-40 |
|
140 |
°C |
TJ |
virtual junction temperature |
|
|
|
|
125 |
°C |
Wt |
Weight |
|
|
|
|
|
g |
F |
mounting force |
|
|
14 |
22 |
24 |
kN |
外形図
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