2100Vインターディジタル化された増幅位相制御サイリスタ
最新の価格を取得するお支払い方法の種類: | L/C,T/T,Paypal |
インコタームズ: | FOB,CFR,CIF |
輸送方法: | Ocean,Air |
ポート: | Shanghai |
お支払い方法の種類: | L/C,T/T,Paypal |
インコタームズ: | FOB,CFR,CIF |
輸送方法: | Ocean,Air |
ポート: | Shanghai |
モデル: YZPST-R2619ZC21J
ブランド: YZPST
YZPST-R2619ZC21J
特徴:
。すべての拡散構造
。インターディゲート型増幅ゲート構成
。保証された最大ターンオフ時間
。高いdV / dt能力
。圧力組立装置
電気的特性および定格
ブロッキング - オフ状態
VRRM (1) |
VDRM (1) |
VRSM (1) |
2100 |
2100 |
2200 |
V RRM =繰り返しピーク逆電圧
V DRM =繰返しピークオフ電圧
V RSM =非反復ピーク逆電圧(2)
Repetitive peak reverse leakage and off state leakage |
IRRM / IDRM |
20 mA 200 mA (3) |
Critical rate of voltage rise |
dV/dt (4) |
200 V/msec |
導通状態
Parameter |
Symbol |
Min. |
Max. |
Typ. |
Units |
Conditions |
Average value of on-state current |
IT(AV)M |
|
2619 |
|
A |
Sinewave,180o conduction,Tc=55oC |
RMS value of on-state current |
ITRMS |
|
5227 |
|
A |
Nominal value |
Peak one cPSTCle surge (non repetitive) current |
ITSM |
|
33.8
37.2 |
|
kA
kA |
8.3 msec (60Hz), sinusoidal wave- shape, 180o conduction, Tj = 125 oC 10.0 msec (50Hz), sinusoidal wave- shape, 180o conduction, Tj = 125 oC |
I square t |
I2t |
|
5.71x106 |
|
A2s |
8.3 msec |
Latching current |
IL |
|
- |
|
mA |
VD = 24 V; RL= 12 ohms |
Holding current |
IH |
|
1000 |
|
mA |
VD = 24 V; I =2.5 A |
Peak on-state voltage |
VTM |
|
2.3 |
|
V |
ITM = 4000 A |
Critical rate of rise of on-state current (5, 6) |
di/dt |
|
1500 |
|
A/ms |
Switching from VDRM £ 1000 V, non-repetitive |
Critical rate of rise of on-state current (6) |
di/dt |
|
1000 |
|
A/ms |
Switching from VDRM £ 1000 V |
ゲーティング
Parameter |
Symbol |
Min. |
Max. |
Typ. |
Units |
Conditions |
Peak gate power dissipation |
PGM |
|
30 |
|
W |
|
Average gate power dissipation |
PG(AV) |
|
5 |
|
W |
|
Peak gate current |
IGM |
|
- |
|
A |
|
Gate current required to trigger all units |
IGT |
|
300 |
|
mA |
VD = 10 V;IT=3A;Tj = +25 oC
|
Gate voltage required to trigger all units
|
VGT |
|
3 |
|
V
|
VD = 10 V;IT=3A;Tj = +25 oC
|
Peak negative voltage |
VRGM |
|
5 |
|
V |
|
動的
Parameter |
Symbol |
Min. |
Max. |
Typ. |
Units |
Conditions |
Delay time |
tgd |
|
- |
0.8 |
ms |
VD=67% VDRM, IT=2000A, di/dt=60A/us, IFG=2A, tr=0.5us, Tj=25C |
Turn-on time |
tgt |
|
- |
1.5 |
|
|
Turn-off time (with VR = -5 V) |
tq |
|
- |
50 |
ms |
ITM=4000A, tp=2000us, di/dt=60A/us, Vr=100V, Vdr=67%VDRM, dVdr/dt=200V/us |
Reverse recovery current |
Irm |
|
- |
|
A |
ITM=4000A, tp=2000us, di/dt=60A/us |
熱的および機械的特性および定格
Parameter |
Symbol |
Min. |
Max. |
Typ. |
Units |
Conditions |
Operating temperature |
Tj |
-40 |
+125 |
|
oC |
|
Storage temperature |
Tstg |
-40 |
+150 |
|
oC |
|
Thermal resistance - junction to case |
RQ (j-c) |
|
- - |
|
K/kW |
Double sided cooled Single sided cooled |
Thermal resistamce - case to sink |
RQ (c-s) |
|
- - |
|
K/kW |
Double sided cooled * Single sided cooled * |
Thermal resistamce - junction to sink |
RQ (c-s) |
|
11 22 |
|
K/kW |
Double sided cooled * Single sided cooled * |
Mounting force |
F |
27 |
47 |
- |
kN |
|
Weight |
W |
|
|
1.7 |
Kg |
about |
*取付面は滑らかで、平らでグリース入り
注:ケースの概要と寸法については、このテクニカルデータの最後のページのケース概要図を参照してください。
Sym |
A |
B |
C |
D |
H |
mm |
109 |
73 |
98 |
3.5×3 |
35±1 |
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