KK2000A4000V位相制御電源サイリスタ4000v
$268≥20Piece/Pieces
お支払い方法の種類: | L/C,T/T,Paypal |
インコタームズ: | FOB,CFR,CIF |
最小注文数: | 20 Piece/Pieces |
輸送方法: | Ocean,Air |
ポート: | Shanghai |
$268≥20Piece/Pieces
お支払い方法の種類: | L/C,T/T,Paypal |
インコタームズ: | FOB,CFR,CIF |
最小注文数: | 20 Piece/Pieces |
輸送方法: | Ocean,Air |
ポート: | Shanghai |
モデル: YZPST-KK2000A4000V
ブランド: YZPST
販売単位 | : | Piece/Pieces |
パッケージ型式 | : | 1.帯電防止包装2.カートン箱3.プラスチック保護包装 |
相制御アプリケーション用高電力サイリスタ
YZPST-KK2000A4000V
特徴:
。全拡散構造
。櫛形増幅ゲート構成
。保証最大ターンオフ時間
。高いdV / dt能力
。圧力組立装置
電気的特性および定格BlocのK ING - オフ 状態
Device Type |
VRRM (1) |
VDRM (1) |
VRSM (1) |
KK2000A |
4000 |
4000 |
4100 |
V RRM = R e p etiti v e p個の電子のk R e V E が R S E V O LTA グラム E
V DRM = R e p etiti v e p個の電子のk O F F 状態 V O LTA グラム E
V R S M = N o n R E P etiti のV E p個の電子のk R e V E が R S E V O LTA グラム E (2 )
Repetitive peak reverse leakage and off state leakage |
IRRM / IDRM |
20 mA 200 mA (3) |
Critical rate of voltage rise |
dV/dt (4) |
1000 V/msec |
共同のnダクト- Sのテイトに
Parameter |
Symbol |
Min. |
Max. |
Typ. |
Units |
Conditions |
Average value of on-state current |
IT(AV) |
|
2000 |
|
A |
Sinewave,180o conduction,Tc=70oC |
RMS value of on-state current |
ITRMS |
|
3300 |
|
A |
Nominal value |
Peak one cPSTCle surge (non repetitive) current |
ITSM |
|
42000
39000 |
|
A
A |
8.3 msec (60Hz), sinusoidal wave- shape, 180o conduction, Tj = 125 oC 10.0 msec (50Hz), sinusoidal wave- shape, 180o conduction, Tj = 125 oC |
I square t |
I2t |
|
5.5x106 |
|
A2s |
8.3 msec |
Latching current |
IL |
|
1000 |
|
mA |
VD = 24 V; RL= 12 ohms |
Holding current |
IH |
|
500 |
|
mA |
VD = 24 V; I = 2.5 A |
Peak on-state voltage |
VTM |
|
2.60 |
|
V |
ITM = 2000 A; Tj = 125 oC |
Critical rate of rise of on-state current (5, 6) |
di/dt |
|
800 |
|
A/ms |
Switching from VDRM £ 1000 V, non-repetitive |
Critical rate of rise of on-state current (6) |
di/dt |
|
300 |
|
A/ms |
Switching from VDRM £ 1000 V |
Gティン
Parameter |
Symbol |
Min. |
Max. |
Typ. |
Units |
Conditions |
Peak gate power dissipation |
PGM |
|
200 |
|
W |
tp = 40 us |
Average gate power dissipation |
PG(AV) |
|
5 |
|
W |
|
Peak gate current |
IGM |
|
20 |
|
A |
|
Gate current required to trigger all units |
IGT |
|
300 200 125 |
|
mA mA mA |
VD = 6 V;RL = 3 ohms;Tj = -40 oC VD = 6 V;RL = 3 ohms;Tj = +25 oC VD = 6 V;RL = 3 ohms;Tj = +125oC |
Gate voltage required to trigger all units |
VGT |
0.30 |
5 4 |
|
V V V |
VD = 6 V;RL = 3 ohms;Tj = -40 oC VD = 6 V;RL = 3 ohms;Tj = 0-125oC VD = Rated VDRM; RL = 1000 ohms; Tj = + 125 oC |
Peak negative voltage |
VGRM |
|
20 |
|
V |
|
D y na m ic
Parameter |
Symbol |
Min. |
Max. |
Typ. |
Units |
Conditions |
|
Delay time |
td |
|
|
2.0 |
|
ms |
ITM = 50 A; VD = 67% VDRM Gate pulse: VG = 30 V; RG = 10 ohms; tr = 0.1 ms; tp = 20 ms |
Turn-off time (with VR = -5 V) |
tq |
|
|
100 |
|
ms |
ITM > 2000 A; di/dt = 25 A/ms; VR ³ -5 V; Re-applied dV/dt = 400 V/ms linear to 67% VDRM ; Tj = 125 oC; Duty cPSTCle ³ 0.01% |
Reverse recovery current |
Irr |
|
200 |
|
|
A |
ITM > 2000 A; di/dt = 25 A/ms; VR ³ -50 V; Tj = 125 oC |
熱的および機械的特性と定格
Parameter |
Symbol |
Min. |
Max. |
Typ. |
Units |
Conditions |
Operating temperature |
Tj |
-40 |
+125 |
|
oC |
|
Storage temperature |
Tstg |
-40 |
+150 |
|
oC |
|
Thermal resistance - junction to case |
RQ (j-c) |
|
0.012 |
|
o C/W |
Double sided cooled Single sided cooled |
Thermal resistamce - case to sink |
RQ (c-s) |
|
0.002 |
|
o C/W |
Double sided cooled * Single sided cooled * |
Mounting force |
P |
8000 35.5 |
10000 44.4 |
|
lb. kN |
|
Weight |
W |
|
|
3.5 1.60 |
Lb. Kg. |
|
* 未 TI O M N G su r f a c es S m個の オブジェクト指向のT H、 F緯度 a n Gの R E Sの ED
TE O N :F O R c a s e O U N E TLI A N D d i m e ns i o ns 、 sの EE c a s e O U N E TLI Dr a w i n g に グラム電子 P 3 O F t hは T E C HNのiCal データ
A: |
84 |
mm |
B: |
118 |
mm |
C: |
108 |
mm |
E: |
36 |
mm |
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