85A電子シガーライターMosfet Load 85N03
$0.299≥1000Piece/Pieces
お支払い方法の種類: | L/C,T/T,Paypal |
インコタームズ: | FOB,CFR,CIF |
最小注文数: | 1000 Piece/Pieces |
輸送方法: | Ocean,Air |
ポート: | Shanghai |
$0.299≥1000Piece/Pieces
お支払い方法の種類: | L/C,T/T,Paypal |
インコタームズ: | FOB,CFR,CIF |
最小注文数: | 1000 Piece/Pieces |
輸送方法: | Ocean,Air |
ポート: | Shanghai |
モデル: YZPST-85N03
ブランド: YZPST
販売単位 | : | Piece/Pieces |
パッケージ型式 | : | 1.帯電防止包装2.カートン箱3.プラスチック保護包装 |
電子タバコ用ライターMosfet
YZPST-85N03
85A電子シガレットライターMosfetロードスイッチMosfet 85N03
VDSS30V RDS(ON) 2.3mΩ(max.)@ VGS=10V RDS(ON) 3.0mΩ(max.)@ VGS=4.5V ID 85A |
|
Description |
DFN5X6-8L |
YZPST85N03 uses advanced Trench technology and designs to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. |
|
Applications |
Features |
■ Lithium-Ion Secondary Batteries ■ Load Switch ■ DC-DC converters and Off-line UPS |
■ Low On-Resistance ■ Low Input Capacitance ■ Low Miller Charge ■ Low Input / Output Leakage |
Absolute Maximum Ratings (TA=25°C unless otherwise noted) |
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Parameter |
Symbol |
Value |
Unit |
Drain-Source Voltage |
VDSS |
30V |
V |
Gate-Source Voltage |
VGSS |
±20V |
V |
Drain Current-Continuous @ TC=25℃ NOTE 3 |
ID |
85 |
A |
Drain Current-Continuous @ TC=100℃ NOTE 3 |
68 |
A |
|
Drain Current-Pulsed NOTE 1 |
IDM |
320 |
A |
Avalanche Current, L=0.1mH |
IAS |
50 |
A |
Avalanche Energy, L=0.1mH |
EAS |
125 |
mJ |
Maximum Power Dissipation @ TC=25℃ |
PD |
60 |
W |
Maximum Power Dissipation @ TA=25℃ |
5.7 |
W |
|
Storage Temperature Range |
TSTG |
-50 to 150°C |
°C |
Operating Junction Temperature Range |
TJ |
-50 to 150°C |
°C |
Thermal Resistance Ratings |
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Parameter |
Symbol |
Conditions |
Min. |
Typ. |
Max. |
Unit |
Maximum Junction-to-Ambient NOTE2 |
RθJA |
Steady State |
- |
- |
22 |
°C/W |
Maximum Junction-to-Case |
RθJC |
Steady State |
- |
- |
2.1 |
°C/W |
Electrical Characteristics(TJ=25°C unless otherwise noted) |
||||||
Parameter |
Symbol |
Conditions |
Min. |
Typ. |
Max. |
Unit |
OFF CHARACTERISTICS |
||||||
Drain-Source Breakdown Voltage |
BVDSS |
VGS=0V , IDS=250uA |
30 |
- |
- |
V |
Zero Gate Voltage Drain Current |
IDSS |
VDS=30V, VGS=0V |
- |
- |
1 |
uA |
Gate-Source Leakage Current |
IGSS |
VGS=±20V , VDS=0V |
- |
- |
±100 |
nA |
ON CHARACTERISTICS |
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Gate Threshold Voltage |
VGS(TH) |
VGS=VDS, IDS=250uA |
1.2 |
- |
2.5 |
V |
Drain-Source On-Resistance |
RDS(ON) |
VGS=10V , IDS=16A |
- |
1.75 |
2.3 |
mΩ |
VGS=4.5V , IDS=16A |
- |
2.6 |
3.0 |
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DYNAMIC CHARACTERISTICS |
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Input Capacitance |
Ciss |
VDS=10V, VGS=0V, f=1MHz |
- |
5910 |
- |
pF |
Output Capacitance |
Coss |
- |
725 |
- |
||
Reverse Transfer Capacitance |
Crss |
- |
537 |
- |
||
SWITCHING CHARACTERISTICS |
||||||
Turn-On Delay Time |
Td(on) |
VDS=15V, VGS=10V, ID=1A , RGEM=3.3Ω |
- |
20 |
- |
ns |
Rise Time |
tr |
- |
6.5 |
- |
||
Turn-Off Delay Time |
Td(off) |
- |
122 |
- |
||
Fall Time |
tf |
- |
15 |
- |
||
Total Gate Charge at 4.5V |
Qg |
VDS=15V, IDS=16A, VGS=10V |
- |
54 |
- |
nC |
Gate to Source Gate Charge |
Qgs |
- |
18 |
- |
||
Gate to Drain "Miller" Charge |
Qgd |
- |
20.5 |
- |
||
SWITCHING CHARACTERISTICS |
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Drain-Source Diode Forward Voltage |
VSD |
VGS=0V, IS=4A |
- |
- |
1.3 |
V |
Body Diode Reverse Recovery Time |
trr |
If=10A, dl/dt=100A/μs, TJ=25°C |
- |
46 |
- |
ns |
Body Diode Reverse Recovery Charge |
Qrr |
- |
38 |
- |
nC |
ノート:
パルステスト:パルス幅≦300μs、デューティサイクル≦2%。
2.RΘJAは、接合部 - ケース間およびケース - 周囲間の熱抵抗の合計です。ここで、ケースの熱基準は、ドレインピンの半田付け面と定義されます。 RΘJCは設計によって保証されていますが、RΘCAはユーザのボード設計によって決定されます。下記のRΘJAは、FR-4でのシングルデバイス操作用です。
まだ空気。
3.最大電流定格はパッケージによって制限されています。
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