高DV/DTレートBTA26-600BW TO-3PA 600V TRIAC
$0.71000-4999 Piece/Pieces
$0.55≥5000Piece/Pieces
お支払い方法の種類: | L/C,T/T,Paypal |
インコタームズ: | FOB,CFR,CIF |
輸送方法: | Ocean,Others |
ポート: | SHANGHAI |
$0.71000-4999 Piece/Pieces
$0.55≥5000Piece/Pieces
お支払い方法の種類: | L/C,T/T,Paypal |
インコタームズ: | FOB,CFR,CIF |
輸送方法: | Ocean,Others |
ポート: | SHANGHAI |
モデル: YZPST-BTA26-600BW
ブランド: yzpst
原産地: 中国
IT(RMS): 26A
VDRM: 600V
VRRM: 600V
VTM: ≤1.5V
Tstg: -40~150℃
Tj: -40~125℃
ITSM: 260A
I2t: 350A2s
BTA26/BTB26SERIES 26A TRIACS
高DV/DTレートBTA26-600BW TO-3PA 600V TRIAC
説明:大きな電流の衝撃負荷に耐える能力が高いため、BTA26/BTB26シリーズTriacは、電磁界面に対して強い抵抗を伴う高いDV/DTレートを提供します。高い整流パフォーマンスにより、3つの象限製品は、誘導負荷での使用を特にお勧めします。 3つの端子すべてから外部ヒートシンクまで、BTA26はUL標準に準拠した2500 VRMの定格断熱電圧を提供します
高能力3象限BTA26-600B TO-3PA TRIAC
主な特徴:
symbol |
value |
unit |
IT(RMS) |
26 |
A |
VDRM/VRRM |
600/800/1200/1600 |
V |
VTM |
≤1.5 |
V |
絶対最大定格:
Parameter |
Symbol |
Value |
Unit |
Storage junction temperature range |
Tstg |
-40~150 |
℃ |
Operating junction temperature range |
Tj |
-40~125 |
℃ |
Repetitive peak off-state voltage (Tj=25℃) |
VDRM |
600/800/1200/1600 |
V |
Repetitive peak reverse voltage (Tj=25℃) |
VRRM |
600/800/1200/1600 |
V |
RMS on-state current |
IT(RMS) |
26 |
A |
Non repetitive surge peak on-state current (full cycle, F=50Hz) |
ITSM |
260 |
A |
I2t value for fusing (tp=10ms) |
I2t |
350 |
A2s |
Critical rate of rise of on-state current(IG=2 × IGT) |
dI/dt |
50 |
A/ μs |
Peak gate current |
IGM |
4 |
A |
Average gate power dissipation |
PG(AV) |
1 |
W |
Peak gate power |
PGM |
10 |
W |
電気特性(TJ = 25℃特に指定がない限り)
3象限:
Parameter | Value | |||||
Test Condition | Quadrant | CW | BW | Unit | ||
IGT | VD=12V, | 35 | 50 | mA | ||
VGT | RL=33Ω | Ⅰ- Ⅱ-Ⅲ | MAX | 1.3 | V | |
VGD | VD=VDRM | Ⅰ- Ⅱ-Ⅲ | MIN | 0.2 | V | |
IH | IT=100mA | MAX | 60 | 80 | mA | |
Ⅰ-Ⅲ | 70 | 90 | ||||
IL | IG=1.2IGT | Ⅱ | MAX | 80 | 100 | mA |
VD=2/3VDRM Tj=125℃ Gate open | ||||||
dV/dt | MIN | 1000 | 1500 | V/ µs |
4象限:
Parameter | Value | |||||
Test Condition | Quadrant | C | B | Unit | ||
Ⅰ- Ⅱ-Ⅲ | 25 | 50 | mA | |||
IGT | VD=12V, | Ⅳ | 50 | 70 | mA | |
VGT | RL=33Ω | ALL | MAX | 1.5 | V | |
VGD | VD=VDRM | ALL | MIN | 0.2 | V | |
IH | IT=100mA | MAX | 60 | 75 | mA | |
Ⅰ-Ⅲ- Ⅳ | 70 | 80 | ||||
IL | IG=1.2IGT | Ⅱ | MAX | 90 | 100 | mA |
VD=2/3VDRM Tj=125℃ Gate open | ||||||
dV/dt | MIN | 200 | 500 | V/ µs |
静的特性
Symbol | Test Condition | Value | Unit | ||
VTM | ITM=35A tp=380μs | Tj=25℃ | MAX | 1.5 | V |
IDRM | Tj=25℃ | 10 | µA | ||
IRRM | VDRM= VRRM | Tj= 125℃ | MAX | 3 | mA |
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Privacy statement: Your privacy is very important to Us. Our company promises not to disclose your personal information to any external company with out your explicit permission.