$5510-199 Piece/Pieces
$45≥200Piece/Pieces
| お支払い方法の種類: | L/C,T/T,Paypal |
| インコタームズ: | FOB,CFR,CIF |
| 輸送方法: | Ocean,Air |
| ポート: | SHANGHAI |
モデル: YZPST-SP50N80FX
ブランド: yzpst
供給タイプ: 元のメーカー, ODM, エージェンシー, 小売業者
参考資料: データシート, 写真
構成: アレイ
現在の内訳: 適用できません
電流保持（Ih）（最大）: 適用できません
電流オフ状態（最大）: 適用できません
SCR番号、ダイオード: 適用できません
動作温度: -55°C〜150°C（TJ）
SCRタイプ: 標準リカバリ
構造: 適用できません
電圧オン: 適用できません
電圧ゲートトリガー（Vgt）（最大）: 適用できません
電流出力（最大）: 適用できません
VDSS: 800V
ID: 50A
IDM: 200A
VGSS: ±30V
EAS: 4500mJ
EAR: 60mJ
P: 690w
TJ, Tstg: -55~+150ºC
| 販売単位 | : | Piece/Pieces |
| 写真の例 | : |
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| ダウンロード | : |
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800V N-Channel Power MOSFET
YZPST-SP50N80FX
特徴
高速スイッチング
100％雪崩をテストしました
DV/DT機能の改善
アプリケーション
スイッチモード電源（SMPS）
無停電電源（UPS）
力率補正（PFC） 
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Device Ordering Marking Packing Information |
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Ordering Number |
Package |
Marking |
Packing |
|
SP50N80FX |
SOT-227 |
SP50N80FX |
Tube |
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Absolute Maximum Ratings TC = 25ºC, unless otherwise noted |
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Parameter |
Symbol |
Value |
Unit |
|
Drain-Source Voltage (VGS = 0V) |
VDSS |
800 |
V |
|
Continuous Drain Current |
ID |
50 |
A |
|
Pulsed Drain Current (note1) |
IDM |
200 |
A |
|
Gate-Source Voltage |
VGSS |
±30 |
V |
|
Single Pulse Avalanche Energy (note2) |
EAS |
4500 |
mJ |
|
Repetitive Avalanche Energy (note1) |
EAR |
60 |
mJ |
|
Power Dissipation (TC = 25ºC) |
PD |
690 |
W |
|
Operating Junction and Storage Temperature Range |
TJ, Tstg |
-55~+150 |
ºC |
|
Caution: Stresses greater than those listed in the “Absolute Maximum Ratings” may cause permanent damage to the device. |
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Thermal Resistance |
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Parameter |
Symbol |
Value |
Unit |
|
Thermal Resistance, Junction-to-Case |
RthJC |
0.18 |
ºC/W |
|
Thermal Resistance, Junction-to-Ambient |
RthJA |
40 |
|
|
Specifications TJ = 25ºC, unless otherwise noted |
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Parameter |
Symbol |
Test Conditions |
Value |
Unit |
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|
Min. |
Typ. |
Max. |
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Static |
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Drain-Source Breakdown Voltage |
V(BR)DSS |
VGS = 0V, ID = 250µA |
800 |
-- |
-- |
V |
|
Zero Gate Voltage Drain Current |
IDSS |
VDS =800, VGS = 0V, TJ = 25ºC |
-- |
-- |
1.0 |
μA |
|
Gate-Source Leakage |
IGSS |
VGS = ±30V |
-- |
-- |
±100 |
nA |
|
Gate-Source Threshold Voltage |
VGS(th) |
IDS = 250µA |
2.5 |
-- |
4.5 |
V |
|
Drain-Source On-Resistance (Note3) |
RDS(on) |
VGS = 10V, ID = 25A |
-- |
120 |
130 |
mΩ |
|
Dynamic |
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Input Capacitance |
Ciss |
VGS = 0V, VDS = 25V, f = 1.0MHz |
-- |
14600 |
-- |
pF |
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Output Capacitance |
Coss |
-- |
1300 |
-- |
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Reverse Transfer Capacitance |
Crss |
-- |
66 |
-- |
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|
Total Gate Charge |
Qg |
VDD =400V, ID =50A, VGS = 10V |
-- |
360 |
-- |
nC |
|
Gate-Source Charge |
Qgs |
-- |
80 |
-- |
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Gate-Drain Charge |
Qgd |
-- |
120 |
-- |
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Turn-on Delay Time |
td(on) |
VDD = 400V, ID =50A, RG = 10 Ω |
-- |
110 |
-- |
ns |
|
Turn-on Rise Time |
tr |
-- |
200 |
-- |
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Turn-off Delay Time |
td(off) |
-- |
160 |
-- |
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Turn-off Fall Time |
tf |
-- |
185 |
-- |
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Drain-Source Body Diode Characteristics |
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Continuous Body Diode Current |
IS |
TC = 25 ºC |
-- |
-- |
50 |
A |
|
Pulsed Diode Forward Current |
ISM |
-- |
-- |
400 |
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Body Diode Voltage |
VSD |
TJ = 25ºC, ISD = 25A, VGS = 0V |
-- |
-- |
1.4 |
V |
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Reverse Recovery Time |
trr |
VGS = 0V,IS = 50A, diF/dt =100A /μs |
-- |
520 |
-- |
ns |
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Reverse Recovery Charge |
Qrr |
-- |
5.0 |
-- |
μC |
|
ノート
1。繰り返し評価：パルス幅が最大接合温度によって制限されています
2。 v dd = 50V、r g =25Ω、開始t j = 25ºC
パルステスト：パルス幅≤300μs、デューティサイクル≤1％
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