C712Lサイリスタ電源コントローラKT55CT
$801-99 Piece/Pieces
$40≥100Piece/Pieces
お支払い方法の種類: | L/C,T/T,Paypal |
インコタームズ: | FOB,CFR,CIF |
最小注文数: | 1 Piece/Pieces |
輸送方法: | Ocean,Air |
ポート: | Shanghai |
$801-99 Piece/Pieces
$40≥100Piece/Pieces
お支払い方法の種類: | L/C,T/T,Paypal |
インコタームズ: | FOB,CFR,CIF |
最小注文数: | 1 Piece/Pieces |
輸送方法: | Ocean,Air |
ポート: | Shanghai |
モデル: YZPST-C712L
ブランド: YZPST
インバーターおよびチョッパーアプリケーション向けの高出力サイリスタ
YZPST-C712L
特徴:
。すべての拡散構造
。センター増幅ゲート構成
。最大2100ボルトのブロッキング機能
。保証された最大ターンオフ時間
。高いdV / dt機能
。圧力組立装置
ブロッキング-オフ状態
VRRM (1) |
VDRM (1) |
VRSM (1) |
2000 |
2000 |
2100 |
V RRM =繰り返しピーク逆電圧
V DRM =繰り返しピークオフ状態電圧
V RSM =非繰り返しピーク逆電圧(2)
Repetitive peak reverse leakage and off state leakage |
IRRM / IDRM
|
20 mA 90 mA (3) |
Critical rate of voltage rise |
dV/dt (4) |
800 V/msec |
ノート:
すべての定格は、Tj = 25 o Cに対して指定されています。
特に明記されていません。
(1)すべての電圧定格は、適用される
50Hz / 60zHzの正弦波形
温度範囲-40〜+125 o C
(2)10ミリ秒。マックス。パルス幅
(3)Tj = 125 o Cの最大値。
(4)線形および指数関数の最小値
80%定格のV DRMへの波形。ゲートが開いています。
Tj = 125 oC 。
(5)非反復値。
(6)di / dtの値は、
EIA / NIMA標準RS-397付き、セクション
5-2-2-6。定義された値はさらに追加されます
スナバ回路から得られるものに
0.2 mFコンデンサと20オーム
下のスリスタと並列の抵抗
テスト。
伝導-状態
Parameter |
Symbol |
Min. |
Max. |
Typ. |
Units |
Conditions |
Average value of on-state current |
IT(AV) |
|
1185 |
|
A |
Sinewave,180o conduction,Tc=80oC |
RMS value of on-state current |
ITRMS |
|
1700 |
|
A |
Nominal value |
Peak one cPSTCle surge (non repetitive) current |
ITSM |
|
-
18500 |
|
A
A |
8.3 msec (60Hz), sinusoidal wave- shape, 180o conduction, Tj = 125 oC 10.0 msec (50Hz), sinusoidal wave- shape, 180o conduction, Tj = 125 oC |
I square t |
I2t |
|
1.66x106 |
|
A2s |
8.3 msec and 10.0 msec |
Latching current |
IL |
|
- |
|
mA |
VD = 24 V; RL= 12 ohms |
Holding current |
IH |
|
- |
|
mA |
VD = 24 V; I = 2.5 A |
Peak on-state voltage |
VTM |
|
1.45 |
|
V |
ITM = 1000 A; Duty Cycle £ 0.01%; Tj =1 25 oC |
Critical rate of rise of on-state current (5, 6) |
di/dt |
|
800 |
|
A/ms |
Switching from VDRM £ 1000 V, non-repetitive |
Critical rate of rise of on-state current (6) |
di/dt |
|
200 |
|
A/ms |
Switching from VDRM £ 1000 V |
ゲーティング
Parameter |
Symbol |
Min. |
Max. |
Typ. |
Units |
Conditions |
Peak gate power dissipation |
PGM |
|
100 |
|
W |
tp = 40 us |
Average gate power dissipation |
PG(AV) |
|
5 |
|
W |
|
Peak gate current |
IGM |
|
- |
|
A |
|
Gate current required to trigger all units |
IGT |
|
- 120 - |
|
mA mA mA |
VD = 6 V;RL = 3 ohms;Tj = -40 oC VD = 6 V;RL = 3 ohms;Tj = +25 oC VD = 6 V;RL = 3 ohms;Tj = +125oC |
Gate voltage required to trigger all units
|
VGT |
|
- 3.0 -
|
|
V V V |
VD = 6 V;RL = 3 ohms;Tj = -40 oC VD = 6 V;RL = 3 ohms;Tj = 0-125oC VD = Rated VDRM; RL = 1000 ohms; Tj = + 125 oC |
Peak negative voltage |
VGRM |
|
20 |
|
V |
|
動的
Parameter |
Symbol |
Min. |
Max. |
Typ. |
Units |
Conditions |
Delay time |
td |
|
- |
0.7 |
ms |
ITM = 50 A; VD = Rated VDRM Gate pulse: VG = 20 V; RG = 20 ohms; tr = 0.1 ms; tp = 20 ms |
Turn-off time (with VR = -50 V) |
tq |
|
40 |
- |
ms |
ITM = 1000 A; di/dt = 25 A/ms; VR ³ -50 V; Re-applied dV/dt = 20 V/ms linear to 80% VDRM; VG = 0; Tj = 125 oC; Duty cPSTCle ³ 0.01% |
Reverse recovery charge |
Qrr |
|
* |
|
mC |
ITM = 1000 A; di/dt = 25 A/ms; VR ³ -50 V |
熱的および機械的特性と評価
Parameter |
Symbol |
Min. |
Max. |
Typ. |
Units |
Conditions |
Operating temperature |
Tj |
-40 |
+125 |
|
oC |
|
Storage temperature |
Tstg |
-40 |
+125 |
|
oC |
|
Thermal resistance - junction to case |
RQ (j-c) |
|
0.023 - |
|
oC/W |
Double sided cooled Single sided cooled |
Thermal resistamce - case to sink |
RQ (c-s) |
|
0.0075 - |
|
oC/W |
Double sided cooled * Single sided cooled * |
Mounting force |
P |
22.2 |
26.6 |
|
kN |
|
Weight |
W |
|
|
- |
g |
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