高短絡能力650V IGBTパワーモジュール200A
$3310-99 Piece/Pieces
$25≥100Piece/Pieces
お支払い方法の種類: | L/C,Paypal |
インコタームズ: | FOB,CFR,CIF |
輸送方法: | Ocean,Land |
ポート: | SHANGHAI |
モデル: YZPST-SKM195GB066D
ブランド: yzpst
原産地: 中国
VCES: 650V
IC: 200A
ICRM: 400A
VGES: ±20V
Ptot: 695W
IGBTパワーモジュールタイプ:YZPST-SKM195GB066D
アプリケーション
モータードライブ用のインバーター
ACおよびDCサーボドライブアンプ
UPS(途切れやすい電源)
ソフトスイッチング溶接機
特徴
トレンチフィールドストップテクノロジーを備えた低VCE(SAT)
正の温度係数を持つVCE(SAT)
高速およびソフトリカバリーアンチパラレルFWDを含む
高い短絡機能(10U)
低インダクタンスモジュール構造
最大接合温度175℃
絶対 最大 評価
Parameter |
Symbol |
Conditions |
Value |
Unit |
Collector-Emitter Voltage |
VCES |
VGE=0V, IC =1mA, Tvj=25℃ |
650 |
V |
Continuous Collector Current |
IC |
Tc=100℃ |
200 |
A |
Peak Collector Current |
ICRM |
tp=1ms |
400 |
A |
Gate-Emitter Voltage |
VGES |
Tvj=25℃ |
±20 |
V |
Total Power Dissipation (IGBT-inverter) |
Ptot |
Tc=25℃ Tvjmax=175℃ |
695 |
W |
IGBT特性
Parameter | Value | Unit | ||||
Symbol | Conditions | Min. | Typ. | Max. | ||
Gate-Emitter Threshold Voltage | VGE(th) | VGE=VCE, IC =3.2mA,Tvj=25℃ | 5.1 | 5.8 | 6.3 | V |
VCE=650V,VGE=0V, Tvj=25℃ | 1 | mA | ||||
Collector-Emitter Cut-off Current | ICES | VCE=650V,VGE=0V, Tvj=125℃ | 5 | mA | ||
Collector-Emitter | Ic=200A,VGE=15V, Tvj=25℃ | 1.45 | 1.95 | V | ||
Saturation Voltage | VCE(sat) | Ic=200A,VGE=15V, Tvj=125℃ | 1.65 | V | ||
Input Capacitance | Cies | VCE=25V,VGE =0V, | 12.3 | nF | ||
Reverse Transfer Capacitance | Cres | f=1MHz, Tvj=25℃ | 0.37 | nF | ||
Internal Gate Resistance | Rgint | 1 | Ω | |||
Turn-on Delay Time | td(on) | 48 | Ns | |||
Rise Time | tr | IC =200 A | 48 | Ns | ||
Turn-off Delay Ttime | td(off) | VCE =300 V | 348 | Ns | ||
Fall Time | tf | VGE = ±15V | 58 | Ns | ||
Energy Dissipation During Turn-on Time | Eon | RG = 3.6Ω | 2.32 | mJ | ||
Energy Dissipation During Turn-off Time | Eoff | Tvj=25℃ | 5.85 | mJ | ||
Turn-on Delay Time | td(on) | 48 | Ns | |||
Rise Time | tr | IC =200 A | 48 | Ns | ||
Turn-off Delay Time | td(off) | VCE = 300V | 364 | Ns | ||
Fall Time | tf | VGE = ±15V | 102 | Ns | ||
Energy Dissipation During Turn-on Time | Eon | RG =3.6Ω | 3.08 | mJ | ||
Energy Dissipation During Turn-off Time | Eoff | Tvj=125℃ | 7.92 | mJ | ||
SC Data | Isc | Tp≤10us,VGE=15V,Tvj=150℃ , Vcc=300V,VCEM≤650V | 1000 | A |
ダイオード特性
Parameter | Value | Unit | ||||
Symbol | Conditions | Min. | Typ. | Max. | ||
Diode DC Forward Current | IF | Tc=100℃ | 200 | A | ||
Diode Peak Forward Current | IFRM | 400 | A | |||
IF=200A,Tvj=25℃ | 1.55 | 1.95 | V | |||
Forward Voltage | VF | IF=200A,Tvj=125℃ | 1.5 | V |
Parameter | Value | Unit | ||||
Symbol | Conditions | Min. | Typ. | Max. | ||
Recovered Charge | Qrr | 8.05 | uC | |||
IF =200 A | ||||||
VR=300V | ||||||
Peak Reverse Recovery Current | Irr | -diF/dt =4200A/us | 148 | A | ||
Reverse Recovery Energy | Erec | Tvj=25℃ | 1.94 | mJ | ||
Recovered Charge | Qrr | 16.9 | uC | |||
IF =200 A | ||||||
VR=300V | ||||||
Peak Reverse Recovery Current | Irr | -diF/dt =4200A/us | 186 | A | ||
Reverse Recovery Energy | Erec | Tvj=125℃ | 3.75 | mJ |
モジュール特性STICS T C = 25°C特に指定がない限り
Parameter | Symbol | Conditions | Value | Unit | ||
Min. | Typ. | Max. | ||||
Isolation voltage | Visol | t=1min,f=50Hz | 2500 | V | ||
Maximum Junction Temperature | Tjmax | 150 | ℃ | |||
Operating Junction Temperature | Tvj op | -40 | 125 | ℃ | ||
Storage Temperature | Tstg | -40 | 125 | ℃ | ||
per IGBT-inverter | 0.19 | K/W | ||||
Junction-to Case | R θjc | per Diode-inverter | 0.31 | K/W | ||
Case to Sink | R θcs | Conductive grease applied | 0.085 | K/W | ||
Module ElectrodesTorque | Mt | Recommended(M5) | 2.5 | 5 | N · m | |
Module-to-SinkTorque | Ms | Recommended(M6) | 3 | 5 | N · m | |
Weight of Module | G | 150 | g |
パッケージ 寸法
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