650V 100AトレンチフィールドストップテクノロジーIGBT
$4.5100-999 Piece/Pieces
$3.5≥1000Piece/Pieces
お支払い方法の種類: | L/C,T/T,Paypal |
インコタームズ: | FOB,CFR,CIF |
$4.5100-999 Piece/Pieces
$3.5≥1000Piece/Pieces
お支払い方法の種類: | L/C,T/T,Paypal |
インコタームズ: | FOB,CFR,CIF |
モデル: YZPST-D100H065AT1S3
原産地: 中国
VCES: 650V
VGES: ±20V
VCEsat, Tvj=25: 1.75V
IC(TC=100℃ ): 100A
ICM: 200A
Tvjmax: 175 ℃
Package: TO247-3L
IC(TC=25℃): 125A
溝 フィールドストップテクノロジーIGBT
YZPST-D100H065AT1S3
特徴
650V、100A
vce(sat)(typ。)= 1.75v@vge=15v、IC = 100A
最大ジャンクション温度175
PBフリーリードメッキ; RoHS対応
アプリケーション
ソーラーコンバーター
中断のない電源
溶接コンバーター
中から高レンジスイッチング周波数コンバーター
鍵 パフォーマンスと P Ackage パラメーター
Order codes |
VCE |
IC |
VCEsat, Tvj=25 |
Tvjmax |
Marking |
Package |
D100H065AT1S3 |
650V |
100A |
1.75V |
175 ℃ |
D100H65AT1 |
TO247-3L |
絶対最大 評価
Symbol | Parameter | Value | Unit |
VCES | Collector-Emitter Voltage | 650 | V |
VGES | Gate-Emitter Voltage | ±20 | V |
IC | Continuous Collector Current (TC=25 ℃ ) | 125 | A |
Continuous Collector Current (TC=100 ℃ ) | 100 | A | |
ICM | Pulsed Collector Current (Note 1) | 200 | A |
Diode Forward Current (TC=25 ℃ ) | 125 | A | |
IF | Diode Forward Current (TC=100 ℃ ) | 100 | A |
Maximum Power Dissipation (TC=25 ℃ ) | 385 | W | |
PD | Maximum Power Dissipation (TC=100 ℃ ) | 192 | W |
TJ | Operating Junction Temperature Range | -40 to 175 | ℃ |
TSTG | Storage Temperature Range | -55 to 150 | ℃ |
電気 特性 (TC = 25特に指摘されていない限り。)
Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
BVCES | Collector-Emitter | VGE=0V, IC=200uA | 650 | V | ||
Breakdown Voltage | --- | --- | ||||
ICES | Collector-Emitter Leakage Current | VCE=650V, VGE=0V | 1 | mA | ||
--- | --- | |||||
Gate Leakage Current, Forward | VGE=20V, VCE=0V | 600 | nA | |||
--- | --- | |||||
IGES | Gate Leakage Current, Reverse | VGE=-20V, VCE=0V | 600 | nA | ||
--- | --- | |||||
VGE(th) | Gate Threshold Voltage | VGE=VCE , IC=750uA | 4.2 | --- | 6 | V |
VCE(sat) | Collector-Emitter | VGE=15V, IC=100A, Tj=25 ℃ | --- | 1.75 | 2.2 | V |
Saturation Voltage | VGE=15V, IC=100A, Tj=125 ℃ | --- | 2.05 | --- | V | |
td(on) | Turn-on Delay Time | --- | 35 | --- | ns | |
tr | Turn-on Rise Time | VCC=400V | --- | 155 | --- | ns |
td(off) | Turn-off Delay Time | VGE=±15V | --- | 188 | --- | ns |
tf | Turn-off Fall Time | IC=100A | --- | 69 | --- | ns |
Eon | Turn-on Switching Loss | RG=8 | --- | 4.35 | --- | mJ |
Eoff | Turn-off Switching Loss | Inductive Load | --- | 1.11 | --- | mJ |
Ets | Total Switching Loss | TC=25 ℃ | --- | 5.46 | --- | mJ |
Cies | Input Capacitance | VCE=25V | --- | 7435 | --- | pF |
Coes | Output Capacitance | VGE=0V | --- | 237 | --- | pF |
Cres | Reverse Transfer | f =1MHz | 128 | pF | ||
Capacitance | --- | --- |
Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
IF=100A, Tj=25 ℃ | --- | 1.65 | 2.2 | V | ||
VF | Diode Forward Voltage | IF=100A, Tj=150 ℃ | --- | 1.4 | --- | V |
trr | Diode Reverse Recovery Time | 201 | ns | |||
VR=400V | --- | --- | ||||
IF=100A | ||||||
Irr | Diode peak Reverse | dIF/dt=200A/us | 19 | A | ||
Recovery Current | TC=25 ℃ | --- | --- | |||
Qrr | Diode Reverse Recovery Charge | 2.45 | uC | |||
--- | --- |
注1 繰り返し評価、パルス幅は最大接合温度によって制限されています
パッケージ情報
Privacy statement: Your privacy is very important to Us. Our company promises not to disclose your personal information to any external company with out your explicit permission.
Fill in more information so that we can get in touch with you faster
Privacy statement: Your privacy is very important to Us. Our company promises not to disclose your personal information to any external company with out your explicit permission.