高速スイッチング450A 1200V IGBTモジュール

Symbol

Parameter

Test Conditions

Values

Unit

IGBT

VCES

Collector - Emitter Voltage

TVj=25°C

1200

V

VGES

Gate - Emitter Voltage

±20

V

IC

DC Collector Current

TC=25°C

675

A

TC=80°C

450

A

ICM

Repetitive Peak Collector Current

tp=1ms

900

A

Ptot

Power Dissipation Per IGBT

2016

W

Diode

VRRM

Repetitive Reverse Voltage

TVj=25°C

1200

V

IF(AV)

Average Forward Current

TC=25°C

675

A

TC=80°C

450

A

IFRM

Repetitive Peak Forward Current

tp=1ms

900

A

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

TVj max

Max. Junction Temperature

175

°C

TVj op

Operating Temperature

-40

150

°C

Tstg

Storage Temperature

-40

125

°C

Visol

Insulation Test Voltage

AC, t=1min

3000

V

Torque

To-Sink

Recommended M6

3

5

N·m

Torque

To-Terminal

Recommended M6

2.5

5

N·m

Weight

340

g